Мақаланы E-mail арқылы жіберу Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction
- Авторлар: Yajie Li 1,2, Wang P.1,2, Meng F.1,2, Yu H.1, Zhou X.1, Wang H.1,3, Pan J.1,2
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Мекемелер:
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
- Department of Applied Physics and Materials Science, California Institute of Technology
- Шығарылым: Том 52, № 16 (2018)
- Беттер: 2017-2021
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/205274
- DOI: https://doi.org/10.1134/S1063782618160169
- ID: 205274
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We experimentally investigate and analyze the electrical and optical characteristics of InGaAs/GaAs conventional quantum well laser diode and the quantum well laser diode with slightly-doped tunnel junction. It was found that the laser with slightly-doped tunnel junction has a nonlinear S-shape current-voltage characteristic. The internal quantum efficiencies of the laser with slightly-doped tunnel junction and the conventional laser are 21 and 87.3%, respectively. This suggests that the slightly-doped tunnel junction increased the barrier width and free carrier absorption, thus could reduce the electron tunneling probability and increase the internal loss. Furthermore, compared with the conventional laser, it was found that we could achieve 15 nm broadband spectrum from the laser with slightly-doped tunnel junction, due to the lasing dynamics reflecting the current dynamics. The results show that the slightly-doped tunnel junction plays a crucial role in the laser diode performances, which may lead to the realization of more applications.
Негізгі сөздер
Авторлар туралы
Yajie Li
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083; Beijing, 100049
Pengfei Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083; Beijing, 100049
Fangyuan Meng
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083; Beijing, 100049
Hongyan Yu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083
Xuliang Zhou
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083
Huolei Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science; Department of Applied Physics and Materials Science, California Institute of Technology
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083; Pasadena, California, 91125
Jiaoqing Pan
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Science; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences
Хат алмасуға жауапты Автор.
Email: jqpan@semi.ac.cn
ҚХР, Beijing, 100083; Beijing, 100049
