Мақаланы E-mail арқылы жіберу Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices
- Авторлар: Kudryashov D.1, Gudovskikh A.1,2, Baranov A.1
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Мекемелер:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- Шығарылым: Том 52, № 13 (2018)
- Беттер: 1775-1781
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204957
- DOI: https://doi.org/10.1134/S1063782618130092
- ID: 204957
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.
Авторлар туралы
D. Kudryashov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: kudryashovda@spbau.ru
Ресей, St. Petersburg, 194021
A. Gudovskikh
St. Petersburg National Research Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: kudryashovda@spbau.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197376
A. Baranov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: kudryashovda@spbau.ru
Ресей, St. Petersburg, 194021
