Precision Chemical Etching of GaP(NAs) Epitaxial Layers for the Formation of Monolithic Optoelectronic Devices
- 作者: Kudryashov D.1, Gudovskikh A.1,2, Baranov A.1
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隶属关系:
- St. Petersburg National Research Academic University, Russian Academy of Sciences
- St. Petersburg Electrotechnical University “LETI”
- 期: 卷 52, 编号 13 (2018)
- 页面: 1775-1781
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/204957
- DOI: https://doi.org/10.1134/S1063782618130092
- ID: 204957
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详细
The results of studying the applicability of various etchants for the precision wet etching of structures of monolithic optoelectronic devices containing GaPNAs layers are presented. It is shown that an etchant based on potassium iodide and hydrochloric acid is best suited for this purpose. The presence of nitrogen (up to 4%) and arsenic in the semiconductor composition does not greatly affect the etchant action but requires additional calibration experiments to refine the etching rate in each particular case. Examples of the practical application of precision etching to measure the characteristics of GaPNAs-based solar cells are presented.
作者简介
D. Kudryashov
St. Petersburg National Research Academic University, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: kudryashovda@spbau.ru
俄罗斯联邦, St. Petersburg, 194021
A. Gudovskikh
St. Petersburg National Research Academic University, Russian Academy of Sciences; St. Petersburg Electrotechnical University “LETI”
Email: kudryashovda@spbau.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197376
A. Baranov
St. Petersburg National Research Academic University, Russian Academy of Sciences
Email: kudryashovda@spbau.ru
俄罗斯联邦, St. Petersburg, 194021