Conduction-Electron Spin Resonance in HgSe Crystals
- Авторлар: Veinger A.1, Kochman I.1, Okulov V.2, Andriichuk M.3, Paranchich L.3
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Мекемелер:
- Ioffe Institute
- Mikheev Institute of Metal Physics, Russian Academy of Sciences
- Chernivtsi National University
- Шығарылым: Том 52, № 13 (2018)
- Беттер: 1672-1676
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204859
- DOI: https://doi.org/10.1134/S1063782618130225
- ID: 204859
Дәйексөз келтіру
Аннотация
Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.
Авторлар туралы
A. Veinger
Ioffe Institute
Email: kochman@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Kochman
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: kochman@mail.ioffe.ru
Ресей, St. Petersburg, 194021
V. Okulov
Mikheev Institute of Metal Physics, Russian Academy of Sciences
Email: kochman@mail.ioffe.ru
Ресей, Yekaterinburg, Ural Branch, 620137
M. Andriichuk
Chernivtsi National University
Email: kochman@mail.ioffe.ru
Украина, Chernivtsi, 58012
L. Paranchich
Chernivtsi National University
Email: kochman@mail.ioffe.ru
Украина, Chernivtsi, 58012