Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots
- Авторлар: Derebezov I.1,2, Gaisler V.1, Gaisler A.1, Dmitriev D.1, Toropov A.1, von Helversen M.3, de la Haye C.3, Bounouar S.3, Reitzenstein S.3
-
Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Siberian State University of Telecommunications and Information Science
- Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude
- Шығарылым: Том 52, № 11 (2018)
- Беттер: 1437-1441
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204381
- DOI: https://doi.org/10.1134/S1063782618110064
- ID: 204381
Дәйексөз келтіру
Аннотация
A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap AlxIn1 –xAs alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.
Негізгі сөздер
Авторлар туралы
I. Derebezov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Siberian State University of Telecommunications and Information Science
Хат алмасуға жауапты Автор.
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630102
V. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Gaisler
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Dmitriev
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Toropov
Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: derebezov@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. von Helversen
Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude
Email: derebezov@isp.nsc.ru
Германия, Berlin, D-10623
C. de la Haye
Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude
Email: derebezov@isp.nsc.ru
Германия, Berlin, D-10623
S. Bounouar
Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude
Email: derebezov@isp.nsc.ru
Германия, Berlin, D-10623
S. Reitzenstein
Technische Universität Berlin, Institut für Festkörperphysik Eugene-Wigner-Gebäude
Email: derebezov@isp.nsc.ru
Германия, Berlin, D-10623