Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes
- Авторлар: Ivanov P.1, Potapov A.1, Kudoyarov M.1, Samsonova T.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 52, № 10 (2018)
- Беттер: 1307-1310
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204163
- DOI: https://doi.org/10.1134/S1063782618100056
- ID: 204163
Дәйексөз келтіру
Аннотация
The effect of low-dose proton irradiation (irradiation dose 1010–1.8 × 1011 cm–2) on the capacitance–voltage, forward current–voltage, and reverse-recovery characteristics of 4H-SiC p–no junction diodes is studied. Irradiation is performed with 1.8-MeV protons through a 10-μm-thick Ni-film (the proton energy and Ni-film thickness were chosen so that the projected proton range in silicon carbide is approximately equal to the p–no junction depth). It is shown that proton irradiation in the above doses (i) does not change the concentration of majority carriers, (ii) leads to a dramatic decrease in the lifetime of nonequilibrium carriers (at a low injection level) (by several tens of times at the highest irradiation dose), and (iii) decreases the reverse-recovery charge at a high injection level (by up to a factor of 3 at the highest irradiation dose).
Негізгі сөздер
Авторлар туралы
P. Ivanov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Potapov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kudoyarov
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
T. Samsonova
Ioffe Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021