Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier
- Авторлар: Torkhov N.1,2,3
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Мекемелер:
- Scientific and Research Institute of Semiconductors
- Tomsk State University of Control Systems and Radioelectronics
- Tomsk State University
- Шығарылым: Том 52, № 10 (2018)
- Беттер: 1269-1292
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204137
- DOI: https://doi.org/10.1134/S1063782618100202
- ID: 204137
Дәйексөз келтіру
Аннотация
Studies of an electrostatic system of flat metal–semiconductor contacts with a Schottky barrier reveals a nontrivial dependence of their current and voltage photosensitivity (the photovoltaic effect) on the contact shape. The specific features of using the photovoltaic effect in such contacts are determined, to a great extent, by the built-in periphery electrostatic field with an absolute value that depends on the contact perimeter and area. Thus, to increase the efficiency of light-to-electrical energy conversion by Schottky contacts, it is necessary to use optimization techniques based on the concepts of the proposed physical model of an electrostatic system of flat Schottky contacts with regard to periphery electrostatic fields. The “hot electron resonance” effect, which enhances the external quantum efficiency of photodiodes with a Schottky barrier, can be explained by enhancement of the field emission of electrons by the periphery electrostatic field.
Авторлар туралы
N. Torkhov
Scientific and Research Institute of Semiconductors; Tomsk State University of Control Systems and Radioelectronics; Tomsk State University
Хат алмасуға жауапты Автор.
Email: trkf@mail.ru
Ресей, Tomsk, 634034; Tomsk, 634050; Tomsk, 634050