Мақаланы E-mail арқылы жіберу Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range
- Авторлар: Rumyantsev V.1,2, Bovkun L.1,3, Kadykov A.1,4, Fadeev M.1, Dubinov A.1,2, Aleshkin V.1,2, Mikhailov N.5,6, Dvoretsky S.5, Piot B.3, Orlita M.3,7, Potemski M.3, Teppe F.4, Morozov S.1,2, Gavrilenko V.1,2
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Мекемелер:
- Institute for Physics of Microstructures of Russian Academy of Science
- Lobachevsky State University of Nizhny Novgorod
- Laboratoire National des Champs Magnétiques Intenses
- UMR CNRS 5221, GIS-TERALAB
- A. V. Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Institute of Physics
- Шығарылым: Том 52, № 4 (2018)
- Беттер: 436-441
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties
- URL: https://journals.rcsi.science/1063-7826/article/view/202731
- DOI: https://doi.org/10.1134/S1063782618040255
- ID: 202731
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.
Авторлар туралы
V. Rumyantsev
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. Bovkun
Institute for Physics of Microstructures of Russian Academy of Science; Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Grenoble, 38042
A. Kadykov
Institute for Physics of Microstructures of Russian Academy of Science; UMR CNRS 5221, GIS-TERALAB
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Montpellier, 34095
M. Fadeev
Institute for Physics of Microstructures of Russian Academy of Science
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Aleshkin
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Mikhailov
A. V. Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: rumyantsev@ipmras.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
S. Dvoretsky
A. V. Rzhanov Institute of Semiconductor Physics
Email: rumyantsev@ipmras.ru
Ресей, Novosibirsk, 630090
B. Piot
Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
Франция, Grenoble, 38042
M. Orlita
Laboratoire National des Champs Magnétiques Intenses; Institute of Physics
Email: rumyantsev@ipmras.ru
Франция, Grenoble, 38042; Prague, 12116
M. Potemski
Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
Франция, Grenoble, 38042
F. Teppe
UMR CNRS 5221, GIS-TERALAB
Email: rumyantsev@ipmras.ru
Франция, Montpellier, 34095
S. Morozov
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Gavrilenko
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
