电邮这篇文章 Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range
- 作者: Rumyantsev V.1,2, Bovkun L.1,3, Kadykov A.1,4, Fadeev M.1, Dubinov A.1,2, Aleshkin V.1,2, Mikhailov N.5,6, Dvoretsky S.5, Piot B.3, Orlita M.3,7, Potemski M.3, Teppe F.4, Morozov S.1,2, Gavrilenko V.1,2
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隶属关系:
- Institute for Physics of Microstructures of Russian Academy of Science
- Lobachevsky State University of Nizhny Novgorod
- Laboratoire National des Champs Magnétiques Intenses
- UMR CNRS 5221, GIS-TERALAB
- A. V. Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Institute of Physics
- 期: 卷 52, 编号 4 (2018)
- 页面: 436-441
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties
- URL: https://journals.rcsi.science/1063-7826/article/view/202731
- DOI: https://doi.org/10.1134/S1063782618040255
- ID: 202731
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详细
We investigate the prospects of HgTe/HgCdTe quantum wells for long-wavelength interband lasers (λ = 15–30 μm). The properties of stimulated emission (SE) and magnetoabsorbtion data of QWs structures with wide-gap HgCdTe dielectric waveguide provide an insight on dominating non-radiative carrier recombination mechanism. It is shown that the carrier heating under intense optical pumping is the main factor limiting the SE wavelength and intensity, since the Auger recombination is greatly enhanced when carriers populate high energy states in the valence band.
作者简介
V. Rumyantsev
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
L. Bovkun
Institute for Physics of Microstructures of Russian Academy of Science; Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Grenoble, 38042
A. Kadykov
Institute for Physics of Microstructures of Russian Academy of Science; UMR CNRS 5221, GIS-TERALAB
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Montpellier, 34095
M. Fadeev
Institute for Physics of Microstructures of Russian Academy of Science
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Aleshkin
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Mikhailov
A. V. Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
S. Dvoretsky
A. V. Rzhanov Institute of Semiconductor Physics
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Novosibirsk, 630090
B. Piot
Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
法国, Grenoble, 38042
M. Orlita
Laboratoire National des Champs Magnétiques Intenses; Institute of Physics
Email: rumyantsev@ipmras.ru
法国, Grenoble, 38042; Prague, 12116
M. Potemski
Laboratoire National des Champs Magnétiques Intenses
Email: rumyantsev@ipmras.ru
法国, Grenoble, 38042
F. Teppe
UMR CNRS 5221, GIS-TERALAB
Email: rumyantsev@ipmras.ru
法国, Montpellier, 34095
S. Morozov
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
V. Gavrilenko
Institute for Physics of Microstructures of Russian Academy of Science; Lobachevsky State University of Nizhny Novgorod
Email: rumyantsev@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
