Electrical properties and the determination of interface state density from I–V, C–f and G–f measurements in Ir/Ru/n-InGaN Schottky barrier diode
- Авторлар: Padma R.1, Rajagopal Reddy V.1
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Мекемелер:
- Department of Physics
- Шығарылым: Том 51, № 12 (2017)
- Беттер: 1641-1649
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202057
- DOI: https://doi.org/10.1134/S1063782617120156
- ID: 202057
Дәйексөз келтіру
Аннотация
The electrical properties of the Ir/Ru Schottky contacts on n-InGaN have been investigated by current-voltage (I–V), capacitance-voltage (C–V), capacitance-frequency (C–f) and conductance-frequency (G–f) measurements. The obtained mean barrier height and ideality factor from I–V are 0.61 eV and 1.89. The built-in potential, doping concentration and barrier height values are also estimated from the C–V measurements and the corresponding values are 0.62 V, 1.20 × 1017 cm–3 and 0.79 eV, respectively. The interface state density (NSS) obtained from forward bias I–V characteristics by considering the series resistance (RS) values are lower without considering the series resistance (RS). Furthermore, the interface state density (NSS) and relaxation time (τ) are also calculated from the experimental C–f and G–f measurements. The NSS values obtained from the I–V characteristics are almost three orders higher than the NSS values obtained from the C–f and G–f measurements. The experimental results depict that NSS and τ are decreased with bias voltage. The frequency dependence of the series resistance (RS) is attributed to the particular distribution density of interface states.
Авторлар туралы
R. Padma
Department of Physics
Email: reddy_vrg@rediffmail.com
Үндістан, Tirupati, 517 502
V. Rajagopal Reddy
Department of Physics
Хат алмасуға жауапты Автор.
Email: reddy_vrg@rediffmail.com
Үндістан, Tirupati, 517 502