Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
- Авторлар: Kozhukhov A.1,2, Sheglov D.1, Latyshev A.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 51, № 4 (2017)
- Беттер: 420-422
- Бөлім: Surfaces, Interfaces, and Thin Films
- URL: https://journals.rcsi.science/1063-7826/article/view/199691
- DOI: https://doi.org/10.1134/S1063782617040091
- ID: 199691
Дәйексөз келтіру
Аннотация
A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.
Авторлар туралы
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: antonkozhukhov@yandex.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
D. Sheglov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonkozhukhov@yandex.ru
Ресей, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: antonkozhukhov@yandex.ru
Ресей, Novosibirsk, 630090