Мақаланы E-mail арқылы жіберу Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
- Авторлар: Shtrom I.1,2,3, Bouravleuv A.1,2,3, Samsonenko Y.2,3,4, Khrebtov A.2,4, Soshnikov I.1,2,3, Reznik R.2,4,5, Cirlin G.2,3,4, Dhaka V.6, Perros A.6, Lipsanen H.6
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Мекемелер:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research Academic University—Nanotechnology Research and Education Center
- Institute of Analytical Instrumentation
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- St. Petersburg State Polytechnic University
- Aalto University
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1619-1621
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198858
- DOI: https://doi.org/10.1134/S1063782616120186
- ID: 198858
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
Авторлар туралы
I. Shtrom
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Хат алмасуға жауапты Автор.
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
A. Bouravleuv
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
Yu. Samsonenko
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
A. Khrebtov
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
I. Soshnikov
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
R. Reznik
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; St. Petersburg State Polytechnic University
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 195251
G. Cirlin
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
V. Dhaka
Aalto University
Email: igorstrohm@mail.ru
Финляндия, Espoo, FI-00076
A. Perros
Aalto University
Email: igorstrohm@mail.ru
Финляндия, Espoo, FI-00076
H. Lipsanen
Aalto University
Email: igorstrohm@mail.ru
Финляндия, Espoo, FI-00076
