Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
- Авторлар: Tarasova E.1, Obolenskaya E.1, Hananova A.1, Obolensky S.1, Zemliakov V.2, Egorkin V.2, Nezhenzev A.1, Saharov A.3, Zazul’nokov A.3, Lundin V.3, Zavarin E.3, Medvedev G.4
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Мекемелер:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- National Research University of Electronic Technology (MIET)
- Ioffe Physical–Technical Institute
- JSC RPE Salut
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1574-1578
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198775
- DOI: https://doi.org/10.1134/S1063782616120216
- ID: 198775
Дәйексөз келтіру
Аннотация
The sensitivity of classical n+/n– GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.
Авторлар туралы
E. Tarasova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod (NNSU)
Хат алмасуға жауапты Автор.
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
A. Hananova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
S. Obolensky
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
V. Zemliakov
National Research University of Electronic Technology (MIET)
Email: obolensk@rf.unn.ru
Ресей, Moscow, Zelenograd, 124498
V. Egorkin
National Research University of Electronic Technology (MIET)
Email: obolensk@rf.unn.ru
Ресей, Moscow, Zelenograd, 124498
A. Nezhenzev
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950
A. Saharov
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Ресей, St. Petersburg, 194021
A. Zazul’nokov
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Ресей, St. Petersburg, 194021
V. Lundin
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Ресей, St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Ресей, St. Petersburg, 194021
G. Medvedev
JSC RPE Salut
Email: obolensk@rf.unn.ru
Ресей, Nizhny Novgorod, 603950