Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling
- Авторлар: Asryan L.1, Zubov F.2,3, Kryzhanovskaya N.2,3, Maximov M.2,3, Zhukov A.2,3
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Мекемелер:
- Virginia Polytechnic Institute and State University
- St. Petersburg National Research Academic University
- Peter-the-Great Polytechnic University
- Шығарылым: Том 50, № 10 (2016)
- Беттер: 1362-1368
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198089
- DOI: https://doi.org/10.1134/S1063782616100055
- ID: 198089
Дәйексөз келтіру
Аннотация
The power characteristics of quantum-well lasers with asymmetric barrier layers, which represent a novel type of injection laser, are calculated on the basis of an extended model taking into account asymmetry in the filling of electron and hole states. The electron–hole asymmetry is shown to have no significant effect on the characteristics of these lasers. Even in the presence of intermediate layers (located between the quantum well and each of the two asymmetric barrier layers), where parasitic electron–hole recombination does occur, the internal differential quantum efficiency of such a laser exhibits only a weak dependence on the pump current and remains close to unity; therefore, the light–current characteristic remains linear up to high pumping levels.
Авторлар туралы
L. Asryan
Virginia Polytechnic Institute and State University
Хат алмасуға жауапты Автор.
Email: asryan@vt.edu
АҚШ, Blacksburg, Virginia, 24061
F. Zubov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
N. Kryzhanovskaya
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
M. Maximov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
A. Zhukov
St. Petersburg National Research Academic University; Peter-the-Great Polytechnic University
Email: asryan@vt.edu
Ресей, St. Petersburg, 194021; St. Petersburg, 195251