Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films
- Авторлар: Ivanov P.1, Kudoyarov M.1, Kozlovski M.1, Potapov A.1, Samsonova T.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 7 (2016)
- Беттер: 920-923
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/197427
- DOI: https://doi.org/10.1134/S1063782616070071
- ID: 197427
Дәйексөз келтіру
Аннотация
It is shown that 9-μm-thick semi-insulating surface layers can be formed in moderately doped n-type silicon carbide (donor concentration 2 × 1016 cm–3) via the comparatively low-dose (7 × 1011 cm–2) implantation of high-energy (53 MeV) argon ions. The free-carrier removal rate is estimated at ~104 cm–1. The resistivity of the semi-insulator is no less than 7 × 1012 Ω cm. Analysis of the monopolar current of electron injection into the semi-insulator shows that the impurity-conductivity compensation is due to radiationinduced defects pinning the equilibrium Fermi level at a depth of 1.16 eV below the conduction-band bottom. The density of defect states at the Fermi level is 2.7 × 1016 cm2 eV–1.
Авторлар туралы
P. Ivanov
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kudoyarov
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Kozlovski
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Potapov
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021
T. Samsonova
Ioffe Physical–Technical Institute
Email: Pavel.Ivanov@mail.ioffe.ru
Ресей, St. Petersburg, 194021