Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment
- Авторлар: Gaidar G.1, Baranskii P.2
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Мекемелер:
- Institute for Nuclear Research
- Lashkaryov Institute of Semiconductor Physics
- Шығарылым: Том 50, № 6 (2016)
- Беттер: 735-740
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197204
- DOI: https://doi.org/10.1134/S1063782616060063
- ID: 197204
Дәйексөз келтіру
Аннотация
The effect of thermal annealing in the temperature range 800 ⩽ Tann ⩽ 1200°C and of two cooling rates (vcl = 1 and 15°C min–1) upon a change in the concentration of charge carriers in the conduction band, their mobility, and tensoresistance in n-Si crystals doped by nuclear transmutation and doped with phosphorus impurity via the melt (during growth by the Czochralski method) was investigated. It is found that, after annealing of all of the crystals at Tann = 1050–1100°C, the concentration of charge carriers is increased by a factor of 1.3–1.7 compared to the initial concentration (irrespective of the method of doping). The specific annealing-temperature-dependent effect of cooling with a rate of 15°C min–1 on the properties of transmutation-doped n-Si:P crystals is detected.
Авторлар туралы
G. Gaidar
Institute for Nuclear Research
Хат алмасуға жауапты Автор.
Email: gaydar@kinr.kiev.ua
Украина, Kyiv, 03680
P. Baranskii
Lashkaryov Institute of Semiconductor Physics
Email: gaydar@kinr.kiev.ua
Украина, Kyiv, 03028