Мақаланы E-mail арқылы жіберу Formation of graphite/sic structures by the thermal decomposition of silicon carbide
- Авторлар: Mynbaeva M.1,2, Lavrent’ev A.1, Mynbaev K.1,2
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Мекемелер:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research University of Information Technologies, Mechanics and Optics
- Шығарылым: Том 50, № 1 (2016)
- Беттер: 138-142
- Бөлім: Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/196721
- DOI: https://doi.org/10.1134/S1063782616010176
- ID: 196721
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.
Авторлар туралы
M. Mynbaeva
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Хат алмасуға жауапты Автор.
Email: mgm@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
A. Lavrent’ev
Ioffe Physical–Technical Institute
Email: mgm@mail.ioffe.ru
Ресей, St. Petersburg, 194021
K. Mynbaev
Ioffe Physical–Technical Institute; St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Email: mgm@mail.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
