Simulation of the ohmic loss in photovoltaic laser-power converters for wavelengths of 809 and 1064 nm
- Авторлар: Emelyanov V.1, Mintairov S.1, Sorokina S.1, Khvostikov V.1, Shvarts M.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 1 (2016)
- Беттер: 125-131
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196710
- DOI: https://doi.org/10.1134/S1063782616010085
- ID: 196710
Дәйексөз келтіру
Аннотация
The method of mathematical simulation is used to examine the influence exerted by the characteristics of the epitaxial structure and contact grid of photovoltaic laser-power converters on their ohmic loss. The maximum attainable photoconverter efficiency at a Gaussian distribution of the laser-beam intensity on the surface of a photovoltaic converter and at dark-current densities of p–n junctions typical of structures grown by the metal-organic vapor-phase epitaxy (MOVPE) technique are determined. An approach to finding the optimal parameters of GaAs and In0.24Ga0.76As/GaAs photovoltaic converters in relation to the optical power being converted is suggested, and the structural parameters for incident-power values of 5, 20, and 50 W at wavelengths of 809 and 1064 nm are determined. It is found that, at laser-light intensities of up to 5 W, >60% efficiency can be achieved in laser-light conversion at a wavelength of 809 nm and >55% efficiency, at a wavelength of 1064 nm.
Авторлар туралы
V. Emelyanov
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: resso2003@bk.ru
Ресей, St. Petersburg, 194021
S. Mintairov
Ioffe Physical–Technical Institute
Email: resso2003@bk.ru
Ресей, St. Petersburg, 194021
S. Sorokina
Ioffe Physical–Technical Institute
Email: resso2003@bk.ru
Ресей, St. Petersburg, 194021
V. Khvostikov
Ioffe Physical–Technical Institute
Email: resso2003@bk.ru
Ресей, St. Petersburg, 194021
M. Shvarts
Ioffe Physical–Technical Institute
Email: resso2003@bk.ru
Ресей, St. Petersburg, 194021