Author Details
Zabrodskiy, V. V.
Issue | Section | Title | File |
Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Si:Si LEDs with room-temperature dislocation-related luminescence | |
Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties | |
Vol 50, No 2 (2016) | Physics of Semiconductor Devices | Electroluminescence properties of LEDs based on electron-irradiated p-Si |