Author Details
Zhabotinsky, A. V.
Issue | Section | Title | File |
Vol 52, No 1 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Influence of Substrate Misorientation on the Composition and the Structural and Photoluminescence Properties of Epitaxial Layers Grown on GaAs(100) | |
Vol 52, No 8 (2018) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy | |
Vol 52, No 9 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |