Author Details
Sigov, A. S.
Issue | Section | Title | File |
Vol 50, No 9 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Calculation of the Schottky barrier and current–voltage characteristics of metal–alloy structures based on silicon carbide | |
Vol 52, No 3 (2018) | Physics of Semiconductor Devices | Schottky-Barrier Model Nonlinear in Surface-State Concentration and Calculation of the I–V Characteristics of Diodes Based on SiC and Its Solid Solutions in the Composite Charge-Transport Model | |
Vol 52, No 6 (2018) | Physics of Semiconductor Devices | High-Sensitivity Photodetector Based on Atomically Thin MoS2 |