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Vol 51, No 13 (2017)

Basic Research

On the Existence of Transverse Acoustoelectric Stoneley Waves and Their Applicability in Acoustonanoelectronics

Morocha A.K., Rozhkov A.S.

Abstract

The Stoneley problem is analytically solved for the piezoheterolayers of cubic symmetry crystals for the first time. New types of acoustoelectric waves, in contrast to classical Stoneley waves, are plane-polarized in the direction orthogonal to the sagittal plane. The wave electric field in each layer is elliptically polarized in the sagittal plane. The use of new types of acoustoelectric waves will make it possible to significantly extend the capability of modern acoustoelectronic devices and is directly associated with the transition from acoustoelectronics to acoustonanoelectronics corresponding to the nanometer wavelength range with a carrier frequency of the order of hundreds of gigahertz.

Semiconductors. 2017;51(13):1671-1674
pages 1671-1674 views

Materials for Electronic Engineering

Production of Silicon Nanoparticles for Use in Solar Cells

Gribov B.G., Zinov’ev K.V., Kalashnik O.N., Gerasimenko N.N., Smirnov D.I., Sukhanov V.N., Kononov N.N., Dorofeev S.G.

Abstract

The technological process of the production of silicon nanoparticles from silicon monoxide and methods of the deposition of nanosilicon coatings onto solar cells are developed. The process makes it possible to control the particle dimensions in the range from 2 to 10 nm. The effect of such nanosilicon coatings on the efficiency of solar cells is studied. It is shown that nanosilicon films possess good antireflection and passivation properties and can be successfully used in the technology of the production of solar cells.

Semiconductors. 2017;51(13):1675-1680
pages 1675-1680 views

Effect of the Structural Quality of Quantum-Well Layers of Gallium-Nitride Heterostructures on Their Radiative Characteristics

Vigdorovich E.N., Ermoshin I.G.

Abstract

The structural quality of GaN/GaInN/Al2O3 heterostructure layers and effect of their imperfection on the characteristics of emitters based on them are investigated. The layer imperfection is established by X-ray diffractometry. A new technique and an FD-24K photodiode-based device for determining the quantum yield are developed.

Semiconductors. 2017;51(13):1681-1685
pages 1681-1685 views

Structure and Properties of Nanostructured YBa2Cu3O7–δ, BiFeO3, and Fe3O4

Gadzhimagomedov S.H., Alikhanov N.M., Emirov R.M., Palchaev D.K., Murlieva Z.K., Rabadanov M.K., Sadykov S.A., Khamidov M.M., Hashafa A.D.

Abstract

The development of new nanostructured materials based on YBa2Cu3O7–δ, BiFeO3, and Fe3O4 compounds is considered. The structure, morphology, and properties of these materials are studied. The possibilities of fabricating YBa2Cu3O7–δ ceramics with given densities from nanopowders in a single stage by an energy efficient method and growing superconducting films of the same composition on a silicon substrate (on a SiO2 layer) are demonstrated. The technique for fabricating BiFeO3 nanopowder, making it possible to obtain nanostructured ceramics without additional accompanied phases commonly forming during BiFeO3 synthesis is developed. Two methods of the single-stage synthesis of Fe3O4 nanopowder are presented: burning of nitrate-organic precursors and the electrochemical three-electrode method in which one of the electrodes, i.e., an anode containing scrap iron and slurry, is used as an expendable material.

Semiconductors. 2017;51(13):1686-1691
pages 1686-1691 views

Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy

Sokolov E.M., Fedotov S.D., Statsenko V.N., Timoshenkov S.P., Emelyanov A.V.

Abstract

The surface of silicon-on-sapphire (SOS) epitaxial layers is studied by atomic-force microscopy and the UV (ultraviolet) scattering method. X-Ray diffraction analysis of the SOS layers is carried out. The silicon-sapphire transition region is studied by the photovoltage method. The problem of the accumulation of by-products formed during the synthesis of silicon from monosilane is considered and experimentally confirmed. It is found that the addition of chlorine-containing reagents to the epitaxial process makes it possible to exclude the influence exerted by these products on the growing layer and also to modify the surface microprofile. Analysis of the surface and structure of the SOS layers demonstrates that film growth occurs by the Stranski–Krastanov mechanism. It is shown that a combined method in which a 30–60-nm-thick SOS layer is preliminarily grown from pure SiH4 and then a layer is additionally grown at a 2SiH4:1SiC14 ratio of gas component flow rates is the most preferable method for the fabrication of SOS structures with layer thicknesses of 300 nm and more.

Semiconductors. 2017;51(13):1692-1697
pages 1692-1697 views

Modification of the Surface of Nickel by the Femtosecond Laser Pulses

Kostishko B.B., Svetukhin V.V., Yavtushenko I.O.

Abstract

Experimental results of the formation of a periodic submicron structure on the surface of polycrystalline nickel (Ni) under laser irradiation in air and in a liquid medium (distilled water) are presented. The geometry of the formed surface structures is determined by electron-microscopy methods. When irradiated in air, the structure is formed above the base surface of the sample, and when irradiated in the liquid, it is formed below the base surface. The dimensions of the pure Ni nanoparticles formed during laser ablation of the nickel sample in the liquid were determined.

Semiconductors. 2017;51(13):1698-1701
pages 1698-1701 views

Microelectronic and Nanoelectronic Technology

Electrical Conductivity of Film Composites Based on Polyvinyledene Fluoride with Carbon Nanotubes

Solnyshkin A.V., Kislova I.L., Belov A.N., Sysa A.V., Stroganov A.A., Shevjakov V.I., Silibin M.V., Mihalchan A.A., Lysenko A.A.

Abstract

The results of a study of film composites based on polyvinylidene fluoride with carbon nanotubes (CNTs) by dielectric relaxation spectroscopy are presented. For composite samples containing more than 0.5 wt % of nanotubes, nonlinear current–voltage characteristics are obtained. The concentration dependences of the electrical conductivity of the composites are examined and the percolation threshold for the samples under study is determined. It is shown that an insignificant increase in the electrical conductivity of the composites is observed even upon filling with 0.2 wt % of CNTs, whereas the electrical conductivity becomes three orders of magnitude higher upon the introduction of 1 wt% of CNTs and is seven orders of magnitude higher at more than 3 wt %, compared with the unfilled polymer. This confirms that CNTs are promising for the development of electrically conducting composites and film materials on the basis of polyvinylidene fluoride.

Semiconductors. 2017;51(13):1702-1706
pages 1702-1706 views

Electrochemical Deposition of Permalloy Films for Magneto-Semiconductor Microsystems

Amelichev V.V., Polomoshnov S.A., Nikolaeva N.N., Tikhonov R.D., Kupriyanova M.A.

Abstract

The results of investigating local electrochemical deposition from a chloride electrolyte are presented. Ni81Fe19 permalloy films with magnetic properties similar to those of 3D samples with a uniform thickness and low mechanical stresses without high-temperature annealing are obtained. The dependences of the rate of congruent deposition of the permalloy on the current density are presented.

Semiconductors. 2017;51(13):1707-1708
pages 1707-1708 views

Microelectronic Devices and Systems

Noise in Spectrozonal Multichannel Photocells for Image Converters with Color Separation and Vertically Integrated pn Junctions

Denisova E.A., Uzdovskii V.V., Khainovskii V.I.

Abstract

The characteristics of the dynamic range of a multichannel photocell and the signal-to-noise ratio for read-out photosignals from n and p regions of the photocell are investigated. It is established that the values of the photosensitivities depend both on the chosen design parameters of the photocell and on the highest possible control voltages. It is shown that the read-out photosignal of the multichannel photodiode structure is proportional to the luminous flux.

Semiconductors. 2017;51(13):1709-1712
pages 1709-1712 views

Simulating a Cell Based on a Three-Dimensional Heterojunction with Distributed Charge-Carrier Generation

Shulezhko V.V., Morozova E.V.

Abstract

The idea of designing solar cells with a distributed heterojunction consists in spreading the donor–acceptor interface to the entire active-layer volume in order to enhance the efficiency of the dissociation of photogenerated excitons. Within the proposed model, this principle is generalized to the case of betavoltaic cells that convert the radioactive beta-decay energy into electricity. The volume-distributed radioisotope source in the form of microparticles is investigated. The efficiency of dissociation and the probability of the recombination of generated charge carriers are calculated. It is shown that the dependence of the device efficiency on the scale parameter of the mixture has a maximum, which determines the optimal structure of the three-dimensional heterojunction.

Semiconductors. 2017;51(13):1713-1716
pages 1713-1716 views

Nanotechnology

Narrow-Spectrum Photosensitive Structures Based on J-Aggregates of Cyanine Dyes

Fedorov I.V., Romashkin A.V., Emelianov A.V., Nevolin V.K., Bobrinetskiy I.I.

Abstract

The fabrication processes for narrow-spectrum photosensitive structures based on J-aggregates of cyanine dyes are studied. Two technological approaches are proposed: the electrokinetic deposition of single J-aggregates in the planar electrode configuration and the fabrication of multilayer structures with a sensitive layer of cyanine dye J-aggregates and a transparent electrode made of a conductive carbon nanotube network on a flexible polyethylene naphthalate substrate.

Semiconductors. 2017;51(13):1717-1723
pages 1717-1723 views

Formation of Zinc-Oxide Nanorods by the Precipitation Method

Avdeeva A.V., Zang X., Muradova A.G., Yurtov E.V.

Abstract

Zinc oxide (ZnO) rod-shaped nanoparticles are produced by the precipitation method upon the hydrolysis of zinc-nitrate hexahydrate (Zn(NO3)2 · 6H2O) in the presence of hexamethylenetetramine (C6H12N4). The effect of various parameters on the ZnO-nanorod size and shape is shown. The ZnO nanopowders produced are studied by scanning electron microscopy and X-ray diffraction analysis. The adhesive and mechanical properties of samples containing ZnO nanoparticles and microparticles as additions are studied.

Semiconductors. 2017;51(13):1724-1727
pages 1724-1727 views

Specific Features of Vapor–Liquid–Solid Nanostructure Growth on the Surface of SnS Films during Plasma Treatment

Zimin S.P., Gorlachev E.S., Mokrov D.A., Amirov I.I., Gremenok V.F., Ivanov V.A.

Abstract

The formation of nanostructure arrays on the surface of nanocrystalline tin sulfide (SnS) films during inductively coupled argon plasma treatment is investigated. The parameters of the nanostructures are studied by electron microscopy and energy-dispersive X-ray microanalysis and the main regularities of nanostructure growth are established. It is shown that the SnS nanostructure growth during plasma treatment is complex and involves the vapor–liquid–solid mechanism with self-assembled tin seeds.

Semiconductors. 2017;51(13):1728-1731
pages 1728-1731 views

Methods and Technique of Measurements

Determining the Free Carrier Density in CdxHg1–xTe Solid Solutions from Far-Infrared Reflection Spectra

Belov A.G., Denisov I.A., Kanevskii V.E., Pashkova N.V., Lysenko A.P.

Abstract

A new contactless nondestructive technique for determining the free carrier density in single-crystal samples of CdxHg1–xTe solid solutions and multilayer epitaxial heterostructures based on them from farinfrared reflection spectra is proposed. The characteristic point and corresponding wavenumber in the room-temperature spectral dependence of the reflectance are determined. The heavy hole density is established using calculated calibration curves. It is shown that in constructing the calibration curves, it is necessary to take into account the interaction of plasma oscillations with longitudinal optical phonons.

Semiconductors. 2017;51(13):1732-1736
pages 1732-1736 views

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