Email this article Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes
- Authors: Ikonnikov A.V.1, Chernichkin V.I.1, Dudin V.S.1, Akopian D.A.1, Akimov A.N.2, Klimov A.E.2,3, Tereshchenko O.E.2,4, Ryabova L.I.1, Khokhlov D.R.1,5
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Affiliations:
- Moscow State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Novosibirsk State University
- Lebedev Physical Institute, Russian Academy of Sciences
- Issue: Vol 53, No 9 (2019)
- Pages: 1272-1277
- Section: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207095
- DOI: https://doi.org/10.1134/S1063782619090069
- ID: 207095
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Abstract
The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.
About the authors
A. V. Ikonnikov
Moscow State University
Author for correspondence.
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
V. I. Chernichkin
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
V. S. Dudin
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
D. A. Akopian
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
A. N. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090
A. E. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
O. E. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: antikon@physics.msu.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
L. I. Ryabova
Moscow State University
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991
D. R. Khokhlov
Moscow State University; Lebedev Physical Institute, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Russian Federation, Moscow, 119991; Moscow, 119991
