Мақаланы E-mail арқылы жіберу Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes
- Авторлар: Ikonnikov A.1, Chernichkin V.1, Dudin V.1, Akopian D.1, Akimov A.2, Klimov A.2,3, Tereshchenko O.2,4, Ryabova L.1, Khokhlov D.1,5
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Мекемелер:
- Moscow State University
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State Technical University
- Novosibirsk State University
- Lebedev Physical Institute, Russian Academy of Sciences
- Шығарылым: Том 53, № 9 (2019)
- Беттер: 1272-1277
- Бөлім: Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019
- URL: https://journals.rcsi.science/1063-7826/article/view/207095
- DOI: https://doi.org/10.1134/S1063782619090069
- ID: 207095
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.
Негізгі сөздер
Авторлар туралы
A. Ikonnikov
Moscow State University
Хат алмасуға жауапты Автор.
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991
V. Chernichkin
Moscow State University
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991
V. Dudin
Moscow State University
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991
D. Akopian
Moscow State University
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991
A. Akimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Ресей, Novosibirsk, 630090
A. Klimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State Technical University
Email: antikon@physics.msu.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630073
O. Tereshchenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: antikon@physics.msu.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
L. Ryabova
Moscow State University
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991
D. Khokhlov
Moscow State University; Lebedev Physical Institute, Russian Academy of Sciences
Email: antikon@physics.msu.ru
Ресей, Moscow, 119991; Moscow, 119991
