Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons
- Authors: Korolkov O.M.1, Kozlovski V.V.2, Lebedev A.A.3, Sleptsuk N.1, Toompuu J.1, Rang T.1
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Affiliations:
- Tallinn University of Technology
- Peter the Great St. Petersburg Polytechnic University
- Ioffe Institute
- Issue: Vol 53, No 7 (2019)
- Pages: 975-978
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/206547
- DOI: https://doi.org/10.1134/S1063782619070133
- ID: 206547
Cite item
Abstract
The effect of low-temperature (up to 600°C) isothermal and isochronous annealing on the electrical characteristics of irradiated n-4H-SiC JBS Schottky diodes is studied. Irradiation is performed with 0.9-MeV electrons at a dose of 1 × 1016 cm–2. It is shown that the forward current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the irradiated diodes are mainly restored at annealing temperatures of up to 300°C. As the annealing temperature is raised to 500°C, nearly 90% of the defects introduced by irradiation with fast electrons are annealed out. The possible recommended mode of stabilizing annealing to be used in radiation-defect engineering (RDE) is 500°C, 30 min.
About the authors
O. M. Korolkov
Tallinn University of Technology
Author for correspondence.
Email: shura.lebe@mail.ioffe.ru
Estonia, Tallinn, 19086
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. A. Lebedev
Ioffe Institute
Email: shura.lebe@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. Sleptsuk
Tallinn University of Technology
Email: shura.lebe@mail.ioffe.ru
Estonia, Tallinn, 19086
J. Toompuu
Tallinn University of Technology
Email: shura.lebe@mail.ioffe.ru
Estonia, Tallinn, 19086
T. Rang
Tallinn University of Technology
Email: shura.lebe@mail.ioffe.ru
Estonia, Tallinn, 19086