EMF Induced in a p–n Junction under a Strong Microwave Field and Light
- Authors: Gulyamov G.1, Erkaboev U.I.2, Sharibaev N.Y.2, Gulyamov A.G.3
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Affiliations:
- Namangan Engineering-Construction Institute
- Namangan Engineering-Technological Institute
- Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan
- Issue: Vol 53, No 3 (2019)
- Pages: 375-378
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205870
- DOI: https://doi.org/10.1134/S1063782619030060
- ID: 205870
Cite item
Abstract
The effect of a strong electromagnetic field on currents and electromotive forces in a p–n junction is considered. It is shown that a p–n junction upon exposure to an electromagnetic wave becomes a source of electromotive force (emf) dependent on current. An analytical expression for the emf and internal resistance of such a source is derived. Dependences of the electromotive force and internal resistance on diode currents are obtained from the experimental current–voltage characteristic of a p–n junction placed into a strong microwave (UHF) electromagnetic field.
About the authors
G. Gulyamov
Namangan Engineering-Construction Institute
Author for correspondence.
Email: gulyamov1949@mail.ru
Uzbekistan, Namangan, 160103
U. I. Erkaboev
Namangan Engineering-Technological Institute
Email: gulyamov1949@mail.ru
Uzbekistan, Namangan, 160115
N. Yu. Sharibaev
Namangan Engineering-Technological Institute
Email: gulyamov1949@mail.ru
Uzbekistan, Namangan, 160115
A. G. Gulyamov
Physical-Technical Institute, Academy of Sciences of the Republic of Uzbekistan
Email: gulyamov1949@mail.ru
Uzbekistan, Tashkent, 100084