Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent
- Authors: Grebenshchikova E.A.1, Sidorov V.G.2, Shutaev V.A.1, Yakovlev Y.P.1
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Affiliations:
- Ioffe Institute
- IBSG Co., Ltd
- Issue: Vol 53, No 2 (2019)
- Pages: 234-236
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/205749
- DOI: https://doi.org/10.1134/S1063782619020118
- ID: 205749
Cite item
Abstract
The variation rate of the short-circuit photocurrent of Pd/n-InP Schottky diodes is studied as a function of the presence of hydrogen in a gas mixture with H2 concentrations of 1–100 vol %. It is shown that upon the simultaneous exposure of the Schottky diode to a hydrogen-containing gas mixture and to light (λ = 0.9 μm), the hydrogen concentration in the gas mixture and the Pd/n-InP diode photocurrent variation rate are related exponentially. The Schottky-diode response rate to the presence of hydrogen in the gas mixture increases with the illumination intensity.
About the authors
E. A. Grebenshchikova
Ioffe Institute
Author for correspondence.
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. G. Sidorov
IBSG Co., Ltd
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. A. Shutaev
Ioffe Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
Yu. P. Yakovlev
Ioffe Institute
Email: eagr.iropt7@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021