Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
- Authors: Sobolev N.A.1, Kalyadin A.E.1, Sakharov V.I.1, Serenkov I.T.1, Shek E.I.1, Parshin E.O.2, Melesov N.S.2, Simakin C.G.2
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Affiliations:
- Ioffe Institute
- Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
- Issue: Vol 53, No 2 (2019)
- Pages: 156-159
- Section: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/205660
- DOI: https://doi.org/10.1134/S1063782619020234
- ID: 205660
Cite item
Abstract
The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-energy ions demonstrates that implantation with 1-MeV germanium ions at a dose of 1.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. It is found that subsequent high-temperature annealing of the implanted samples in a chlorine-containing atmosphere at a temperature of 1100°C for 0.5–1.5 h gives rise to so-called D1 and D2 dislocation-related luminescence lines with wavelengths of 1.54 and 1.42 μm. With increasing annealing duration, the intensity of the D1 line decreases and that of D2 remains constant, but the D1 line dominates in all the spectra. The possible factors responsible for a decrease in the intensity of the D1 line and, in particular, the diffusion of germanium atoms and the formation of a silicon–germanium solid solution are discussed.
About the authors
N. A. Sobolev
Ioffe Institute
Author for correspondence.
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
A. E. Kalyadin
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
V. I. Sakharov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
I. T. Serenkov
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
E. I. Shek
Ioffe Institute
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, St. Petersburg, 194021
E. O. Parshin
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, Yaroslavl, 150007
N. S. Melesov
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, Yaroslavl, 150007
C. G. Simakin
Yaroslavl Branch, Institute of Physics and Technology, Russian Academy of Sciences
Email: nick@sobolev.ioffe.rssi.ru
Russian Federation, Yaroslavl, 150007