Growth Modes of GaN Plasma-Assisted MBE Nanowires
- Authors: Berdnikov Y.S.1, Sibirev N.V.2
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Affiliations:
- ITMO University
- St. Petersburg State University
- Issue: Vol 52, No 16 (2018)
- Pages: 2085-2087
- Section: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY
- URL: https://journals.rcsi.science/1063-7826/article/view/205376
- DOI: https://doi.org/10.1134/S1063782618160042
- ID: 205376
Cite item
Abstract
Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) from the model fitting to experimental data.
About the authors
Yu. S. Berdnikov
ITMO University
Author for correspondence.
Email: yury.berdnikov@corp.ifmo.ru
Russian Federation, St. Petersburg, 197101
N. V. Sibirev
St. Petersburg State University
Email: yury.berdnikov@corp.ifmo.ru
Russian Federation, St. Petersburg, 198504