Growth Modes of GaN Plasma-Assisted MBE Nanowires

Аннотация

Within this work we study the plasma-assisted molecular beam epitaxy of GaN on Si(111) substrate at different substrate temperatures and III/V flux ratios. We present the model, which gives the analytical expressions for the boundaries between the three growth modes: compact layer, nanowires, and absence of growth. We extract the activation energy for nucleation of GaN nanowires on the Si(111) from the model fitting to experimental data.