Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge
- Authors: Emtsev V.V.1, Abrosimov N.V.2, Kozlovski V.V.3, Poloskin D.S.1, Oganesyan G.A.1
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Affiliations:
- Ioffe Institute
- Leibniz Institute for Crystal Growth
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 52, No 13 (2018)
- Pages: 1677-1685
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204866
- DOI: https://doi.org/10.1134/S1063782618130249
- ID: 204866
Cite item
Abstract
A comparative study of interactions of shallow impurities with primary defects in oxygen- and carbon-lean moderately doped Si and Ge subjected to irradiation with 0.9 MeV electrons, 60Co gamma-rays, and 15 MeV protons at room temperature is presented and discussed. For the quantitative characterization of such interactions, changes in the total concentration of the original shallow group-V donor or group-III acceptor impurities in the irradiated materials are determined by Hall effect measurements over a wide temperature range. Losses of the shallow donor or acceptor states in the irradiated Si and Ge are indicative of their removal rates that can be used for estimation of production rates of primary defects interacting with the dopants. Some important factors affecting the interactions between primary defects and shallow impurities in Si and Ge are highlighted.
About the authors
V. V. Emtsev
Ioffe Institute
Author for correspondence.
Email: emtsev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Abrosimov
Leibniz Institute for Crystal Growth
Email: emtsev@mail.ioffe.ru
Germany, Berlin, D-12489
V. V. Kozlovski
Peter the Great St. Petersburg Polytechnic University
Email: emtsev@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
D. S. Poloskin
Ioffe Institute
Email: emtsev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. A. Oganesyan
Ioffe Institute
Email: emtsev@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021