Email this article Conduction-Electron Spin Resonance in HgSe Crystals
- Authors: Veinger A.I.1, Kochman I.V.1, Okulov V.I.2, Andriichuk M.D.3, Paranchich L.D.3
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Affiliations:
- Ioffe Institute
- Mikheev Institute of Metal Physics, Russian Academy of Sciences
- Chernivtsi National University
- Issue: Vol 52, No 13 (2018)
- Pages: 1672-1676
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/204859
- DOI: https://doi.org/10.1134/S1063782618130225
- ID: 204859
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Abstract
Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.
About the authors
A. I. Veinger
Ioffe Institute
Email: kochman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Kochman
Ioffe Institute
Author for correspondence.
Email: kochman@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. I. Okulov
Mikheev Institute of Metal Physics, Russian Academy of Sciences
Email: kochman@mail.ioffe.ru
Russian Federation, Yekaterinburg, Ural Branch, 620137
M. D. Andriichuk
Chernivtsi National University
Email: kochman@mail.ioffe.ru
Ukraine, Chernivtsi, 58012
L. D. Paranchich
Chernivtsi National University
Email: kochman@mail.ioffe.ru
Ukraine, Chernivtsi, 58012
