Modification of the Ferromagnetic Properties of Si1 –xMnx Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure
- Authors: Novodvorsky O.A.1, Mikhalevsky V.A.1, Gusev D.S.1, Lotin A.A.1, Parshina L.S.1, Khramova O.D.1, Cherebylo E.A.1, Drovosekov A.B.2, Rylkov V.V.3,4, Nikolaev S.N.3, Chernoglazov K.Y.3, Maslakov K.I.5
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Affiliations:
- Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”, Russian Academy of Sciences
- Kapitza Institute for Physical Problems, Russian Academy of Sciences
- National Research Center “Kurchatov Institute”
- Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics, Russian Academy of Sciences
- Moscow State University
- Issue: Vol 52, No 11 (2018)
- Pages: 1424-1427
- Section: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204339
- DOI: https://doi.org/10.1134/S1063782618110179
- ID: 204339
Cite item
Abstract
A series of thin films of Si1 –xMnx alloys with a thickness from 50 to 100 nm grown by pulsed laser deposition on an Al2O3 substrate in vacuum and in an argon atmosphere is investigated. The significant effect of the buffer-gas pressure in the sputtering chamber on the structural and magnetic homogeneity of the obtained films is shown. The conditions for the formation of a ferromagnetic phase with a high Curie temperature (>300 K) in the samples are studied. With the use of the Langmuir probe method, the threshold of ablation of a MnSi target by second harmonic radiation (λ = 532 nm) of a Nd:YAG Q-switch laser is determined. The time-of-flight curves for the plume ions are obtained with a change in the energy density at the target and argon pressure in the sputtering chamber. A nonmonotonic dependence of the probe time-of-flight signal amplitude on the argon pressure is established for high-energy particles of the plume.
About the authors
O. A. Novodvorsky
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Author for correspondence.
Email: onov@mail.ru
Russian Federation, Shatura, 140700
V. A. Mikhalevsky
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
D. S. Gusev
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
A. A. Lotin
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
L. S. Parshina
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
O. D. Khramova
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
E. A. Cherebylo
Institute of Laser and Information Technologies—Branch of the Federal Scientific Research Center“Crystallography and Photonics”, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Shatura, 140700
A. B. Drovosekov
Kapitza Institute for Physical Problems, Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Moscow, 119334
V. V. Rylkov
National Research Center “Kurchatov Institute”; Fryazino Branch of the Kotelnikov Institute of Radioengineering and Electronics,Russian Academy of Sciences
Email: onov@mail.ru
Russian Federation, Moscow, 123182; Fryazino, 141190
S. N. Nikolaev
National Research Center “Kurchatov Institute”
Email: onov@mail.ru
Russian Federation, Moscow, 123182
K. Yu. Chernoglazov
National Research Center “Kurchatov Institute”
Email: onov@mail.ru
Russian Federation, Moscow, 123182
K. I. Maslakov
Moscow State University
Email: onov@mail.ru
Russian Federation, Moscow, 119991