Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method
- Authors: Klochko N.P.1, Kopach V.R.1, Khrypunov G.S.1, Korsun V.E.1, Lyubov V.M.1, Zhadan D.O.1, Otchenashko A.N.1, Kirichenko M.V.1, Khrypunov M.G.1
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Affiliations:
- National Technical University “Kharkiv Polytechnic Institute”
- Issue: Vol 52, No 9 (2018)
- Pages: 1203-1214
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/204080
- DOI: https://doi.org/10.1134/S1063782618090063
- ID: 204080
Cite item
Abstract
A heterostructure promising for designing a backward diode is formed from a zinc-oxide nanorod array and a nanostructured copper-iodide film. The effect of modes of successive ionic layer adsorption and reaction (SILAR) deposition and the subsequent iodization of CuI films on smooth glass, mica, and fluorine-doped tin oxide (FTO) substrates and on the surface of electrodeposited nanostructured zinc-oxide arrays on the film structure and electrical and optical properties is investigated. A connection between the observed variations in the structure and properties of this material and intrinsic and iodination-induced point defects is established. It is found that the cause and condition for creating a backward-diode heterostructure based on a zinc-oxide nanoarray formed by pulsed electrodeposition and a copper-iodide film grown by the SILAR method is the formation of a p+-CuI degenerate semiconductor by the excessive iodination of layers of this nanostructured material through its developed surface. The n-ZnO/p+-CuI barrier heterostructure, which is fabricated for the first time, has the I–V characteristic of a backward diode, the curvature factor of which (γ = 12 V–1) confirms its high Q factor.
About the authors
N. P. Klochko
National Technical University “Kharkiv Polytechnic Institute”
Author for correspondence.
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
V. R. Kopach
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
G. S. Khrypunov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
V. E. Korsun
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
V. M. Lyubov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
D. O. Zhadan
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
A. N. Otchenashko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
M. V. Kirichenko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001
M. G. Khrypunov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko.np16@gmail.com
Ukraine, Kharkiv, 61001