X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method
- Authors: Pushkarev S.S.1, Grekhov M.M.2, Zenchenko N.V.1
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Affiliations:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- National Research Nuclear University MEPhI
- Issue: Vol 52, No 6 (2018)
- Pages: 734-738
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203481
- DOI: https://doi.org/10.1134/S1063782618060209
- ID: 203481
Cite item
Abstract
The fitting of θ/2θ and ω peaks in X-ray diffraction curves is shown to be most accurate in the case of using an inverse fourth-degree polynomial or probability density function with Student’s distribution (Pearson type VII function). These functions describe well both the highest-intensity central part of the experimental peak and its low-intensity broadened base caused by X-ray diffuse scattering. The mean microdeformation ε and mean vertical domain size D are determined by the Williamson–Hall method for layers of GaN (ε ≈ 0.00006, D ≈ 200 nm) and Al0.32Ga0.68N (ε = 0.0032 ± 0.0005, D = 24 ± 7 nm). The D value obtained for the Al0.32Ga0.68N layer is most likely to result from the nominal thickness of this layer, which is 11 nm.
About the authors
S. S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Author for correspondence.
Email: serp456207@gmail.com
Russian Federation, Moscow, 117105
M. M. Grekhov
National Research Nuclear University MEPhI
Email: serp456207@gmail.com
Russian Federation, Moscow, 115409
N. V. Zenchenko
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: serp456207@gmail.com
Russian Federation, Moscow, 117105