X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson–Hall Method
- Autores: Pushkarev S.1, Grekhov M.2, Zenchenko N.1
-
Afiliações:
- Institute of Ultrahigh-Frequency Semiconductor Electronics
- National Research Nuclear University MEPhI
- Edição: Volume 52, Nº 6 (2018)
- Páginas: 734-738
- Seção: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/203481
- DOI: https://doi.org/10.1134/S1063782618060209
- ID: 203481
Citar
Resumo
The fitting of θ/2θ and ω peaks in X-ray diffraction curves is shown to be most accurate in the case of using an inverse fourth-degree polynomial or probability density function with Student’s distribution (Pearson type VII function). These functions describe well both the highest-intensity central part of the experimental peak and its low-intensity broadened base caused by X-ray diffuse scattering. The mean microdeformation ε and mean vertical domain size D are determined by the Williamson–Hall method for layers of GaN (ε ≈ 0.00006, D ≈ 200 nm) and Al0.32Ga0.68N (ε = 0.0032 ± 0.0005, D = 24 ± 7 nm). The D value obtained for the Al0.32Ga0.68N layer is most likely to result from the nominal thickness of this layer, which is 11 nm.
Sobre autores
S. Pushkarev
Institute of Ultrahigh-Frequency Semiconductor Electronics
Autor responsável pela correspondência
Email: serp456207@gmail.com
Rússia, Moscow, 117105
M. Grekhov
National Research Nuclear University MEPhI
Email: serp456207@gmail.com
Rússia, Moscow, 115409
N. Zenchenko
Institute of Ultrahigh-Frequency Semiconductor Electronics
Email: serp456207@gmail.com
Rússia, Moscow, 117105