Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation
- Authors: Kazantsev D.M.1,2, Akhundov I.O.1,2, Alperovich V.L.1,2, Shwartz N.L.1,3, Kozhukhov A.S.1, Latyshev A.V.1,2
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Affiliations:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Novosibirsk State Technical University
- Issue: Vol 52, No 5 (2018)
- Pages: 618-621
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203205
- DOI: https://doi.org/10.1134/S1063782618050147
- ID: 203205
Cite item
Abstract
GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.
About the authors
D. M. Kazantsev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
I. O. Akhundov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. L. Alperovich
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Author for correspondence.
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
N. L. Shwartz
Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630073
A. S. Kozhukhov
Rzhanov Institute of Semiconductor Physics
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. V. Latyshev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090