Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation
- 作者: Kazantsev D.1,2, Akhundov I.1,2, Alperovich V.1,2, Shwartz N.1,3, Kozhukhov A.1, Latyshev A.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- Novosibirsk State Technical University
- 期: 卷 52, 编号 5 (2018)
- 页面: 618-621
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/203205
- DOI: https://doi.org/10.1134/S1063782618050147
- ID: 203205
如何引用文章
详细
GaAs thermal smoothing at temperatures T ≤ 650°C in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed.
作者简介
D. Kazantsev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
I. Akhundov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Alperovich
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
编辑信件的主要联系方式.
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
N. Shwartz
Rzhanov Institute of Semiconductor Physics; Novosibirsk State Technical University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630073
A. Kozhukhov
Rzhanov Institute of Semiconductor Physics
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: alper@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090