Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
- Authors: Lebedev D.V.1, Kalyuzhnyy N.A.1, Mintairov S.A.1, Belyaev K.G.1, Rakhlin M.V.1, Toropov A.A.1, Brunkov P.1,2, Vlasov A.S.1, Merz J.3, Rouvimov S.3, Oktyabrsky S.4, Yakimov M.4, Mukhin I.V.5, Shelaev A.V.6, Bykov V.A.6, Romanova A.Y.2, Buryak P.A.2, Mintairov A.M.1,3
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Affiliations:
- Ioffe Institute
- St. Petersburg Polytechnical University
- University of Notre Dame
- Institute for Materials
- St. Petersburg Academic University
- NT-MDT Spectrum Instruments
- Issue: Vol 52, No 4 (2018)
- Pages: 497-501
- Section: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
- URL: https://journals.rcsi.science/1063-7826/article/view/202852
- DOI: https://doi.org/10.1134/S1063782618040206
- ID: 202852
Cite item
Abstract
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.
About the authors
D. V. Lebedev
Ioffe Institute
Author for correspondence.
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. A. Kalyuzhnyy
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. A. Mintairov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
K. G. Belyaev
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. V. Rakhlin
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Toropov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
P. Brunkov
Ioffe Institute; St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 195251
A. S. Vlasov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
J. Merz
University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
United States, Notre Dame, IN, 46556
S. Rouvimov
University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
United States, Notre Dame, IN, 46556
S. Oktyabrsky
Institute for Materials
Email: Lebedev.dmitri@mail.ioffe.ru
United States, Albany, NY, 12203
M. Yakimov
Institute for Materials
Email: Lebedev.dmitri@mail.ioffe.ru
United States, Albany, NY, 12203
I. V. Mukhin
St. Petersburg Academic University
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. V. Shelaev
NT-MDT Spectrum Instruments
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, Zelenograd, 124460
V. A. Bykov
NT-MDT Spectrum Instruments
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, Zelenograd, 124460
A. Yu. Romanova
St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
P. A. Buryak
St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 195251
A. M. Mintairov
Ioffe Institute; University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021; Notre Dame, IN, 46556