Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
- 作者: Lebedev D.1, Kalyuzhnyy N.1, Mintairov S.1, Belyaev K.1, Rakhlin M.1, Toropov A.1, Brunkov P.1,2, Vlasov A.1, Merz J.3, Rouvimov S.3, Oktyabrsky S.4, Yakimov M.4, Mukhin I.5, Shelaev A.6, Bykov V.6, Romanova A.2, Buryak P.2, Mintairov A.1,3
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隶属关系:
- Ioffe Institute
- St. Petersburg Polytechnical University
- University of Notre Dame
- Institute for Materials
- St. Petersburg Academic University
- NT-MDT Spectrum Instruments
- 期: 卷 52, 编号 4 (2018)
- 页面: 497-501
- 栏目: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure
- URL: https://journals.rcsi.science/1063-7826/article/view/202852
- DOI: https://doi.org/10.1134/S1063782618040206
- ID: 202852
如何引用文章
详细
We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.
作者简介
D. Lebedev
Ioffe Institute
编辑信件的主要联系方式.
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
N. Kalyuzhnyy
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Mintairov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
K. Belyaev
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Rakhlin
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Toropov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
P. Brunkov
Ioffe Institute; St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251
A. Vlasov
Ioffe Institute
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
J. Merz
University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
美国, Notre Dame, IN, 46556
S. Rouvimov
University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
美国, Notre Dame, IN, 46556
S. Oktyabrsky
Institute for Materials
Email: Lebedev.dmitri@mail.ioffe.ru
美国, Albany, NY, 12203
M. Yakimov
Institute for Materials
Email: Lebedev.dmitri@mail.ioffe.ru
美国, Albany, NY, 12203
I. Mukhin
St. Petersburg Academic University
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Shelaev
NT-MDT Spectrum Instruments
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, Zelenograd, 124460
V. Bykov
NT-MDT Spectrum Instruments
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, Zelenograd, 124460
A. Romanova
St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
P. Buryak
St. Petersburg Polytechnical University
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 195251
A. Mintairov
Ioffe Institute; University of Notre Dame
Email: Lebedev.dmitri@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; Notre Dame, IN, 46556