Single electron transistor: Energy-level broadening effect and thermionic contribution
- Authors: Nasri A.1, Boubaker A.1, Khaldi W.2, Hafsi B.2, Kalboussi A.1
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Affiliations:
- University of Monastir, Microelectronics and Instrumentation laboratory
- CNRS, Centrale Lille, ISEN
- Issue: Vol 51, No 12 (2017)
- Pages: 1656-1660
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202068
- DOI: https://doi.org/10.1134/S1063782617120144
- ID: 202068
Cite item
Abstract
In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si–QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy–level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I–V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined.
About the authors
A. Nasri
University of Monastir, Microelectronics and Instrumentation laboratory
Author for correspondence.
Email: abdelgafar@hotmail.fr
Tunisia, Av de l’environnement, Monastir, 5019
A. Boubaker
University of Monastir, Microelectronics and Instrumentation laboratory
Email: abdelgafar@hotmail.fr
Tunisia, Av de l’environnement, Monastir, 5019
W. Khaldi
CNRS, Centrale Lille, ISEN
Email: abdelgafar@hotmail.fr
France, Lille, 59000
B. Hafsi
CNRS, Centrale Lille, ISEN
Email: abdelgafar@hotmail.fr
France, Lille, 59000
A. Kalboussi
University of Monastir, Microelectronics and Instrumentation laboratory
Email: abdelgafar@hotmail.fr
Tunisia, Av de l’environnement, Monastir, 5019