Residual stresses in silicon and their evolution upon heat treatment and irradiation
- Authors: Matyash I.E.1, Minailova I.A.1, Serdega B.K.1, Khirunenko L.I.2
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Affiliations:
- Lashkaryov Institute of Semiconductor Physics
- Institute of Physics
- Issue: Vol 51, No 9 (2017)
- Pages: 1107-1110
- Section: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/201075
- DOI: https://doi.org/10.1134/S1063782617090147
- ID: 201075
Cite item
Abstract
The distributions of internal stresses in undoped and tin-doped silicon and the influence of electron irradiation with an energy of 5 MeV and of heat treatment at 450°C on the stresses are studied. The stresses are measured by a method based on the detection of birefringence by modulation polarimetry. It is shown that tin-doped silicon includes stripes of point defects with a nonuniform distribution of residual stresses of up to 20 kg cm–2. Heat treatment at 450°C induces an increase in the residual stresses in the sample to 50 kg cm–2. It is established that the radiation defects formed upon the irradiation of tin-doped silicon reduce the residual stresses to 2–3 kg cm–2.
About the authors
I. E. Matyash
Lashkaryov Institute of Semiconductor Physics
Email: irinaminailiva125@gmail.com
Ukraine, Kyiv, 03028
I. A. Minailova
Lashkaryov Institute of Semiconductor Physics
Author for correspondence.
Email: irinaminailiva125@gmail.com
Ukraine, Kyiv, 03028
B. K. Serdega
Lashkaryov Institute of Semiconductor Physics
Email: irinaminailiva125@gmail.com
Ukraine, Kyiv, 03028
L. I. Khirunenko
Institute of Physics
Email: irinaminailiva125@gmail.com
Ukraine, Kyiv, 03028