n-ZnO/p-CuI barrier heterostructure based on zinc-oxide nanoarrays formed by pulsed electrodeposition and SILAR copper-iodide films
- Authors: Klochko N.P.1, Kopach V.P.1, Khrypunov G.S.1, Korsun V.E.1, Volkova N.D.2, Lyubov V.N.1, Kirichenko M.V.1, Kopach A.V.1, Zhadan D.O.1, Otchenashko A.N.1
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Affiliations:
- National Technical University “Kharkiv Polytechnic Institute”
- National Aerospace University “Kharkiv Aviation Institute”
- Issue: Vol 51, No 6 (2017)
- Pages: 789-797
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/200086
- DOI: https://doi.org/10.1134/S106378261706015X
- ID: 200086
Cite item
Abstract
A p-CuI/n-ZnO barrier structure is investigated as a promising base diode structure for a semitransparent near-ultraviolet detector. We analyze the crystal structure and electrical and optical properties of zinc-oxide nanoarrays electrodeposited in the pulsed mode and copper-iodide films formed by the successive ionic layer adsorption and reaction (SILAR) method, which were used as the basis for an n-ZnO/p-CuI barrier heterostructure sensitive to ultraviolet radiation in the spectral range of 365–370 nm. Using the I–V characteristics, a shunting resistance of Rsh · Sc = 879 Ω cm2, a series resistance of Rs · Sc = 8.5 Ω cm2, a diode rectification factor of K = 17.6, a rectifying p–n-junction barrier height of Φ = 1.1 eV, and a diode ideality factor of η = 2.4 are established. It is demonstrated that at low forward biases (0 V < U < 0.15 V), the effects of charge-carrier recombination and tunneling are equal. As the bias increases above 0.15 V, the tunneling–recombination transport mechanism starts working. The diode saturation current J0 is found to be 6.4 × 10–6 mA cm–2 for recombination and tunneling charge-carrier transport and 2.7 × 10–3 mA cm–2 for tunneling–recombination charge-carrier transport.
About the authors
N. P. Klochko
National Technical University “Kharkiv Polytechnic Institute”
Author for correspondence.
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
V. P. Kopach
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
G. S. Khrypunov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
V. E. Korsun
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
N. D. Volkova
National Aerospace University “Kharkiv Aviation Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61070
V. N. Lyubov
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
M. V. Kirichenko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
A. V. Kopach
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
D. O. Zhadan
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000
A. N. Otchenashko
National Technical University “Kharkiv Polytechnic Institute”
Email: klochko_np@mail.ru
Ukraine, Kharkiv, 61000