PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
- Authors: Khairnar A.G.1, Patil V.S.1, Agrawal K.S.1, Salunke R.S.1, Mahajan A.M.1
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Affiliations:
- Department of Electronics, School of Physical Sciences
- Issue: Vol 51, No 1 (2017)
- Pages: 131-133
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199380
- DOI: https://doi.org/10.1134/S1063782617010092
- ID: 199380
Cite item
Abstract
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°С. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.
About the authors
A. G. Khairnar
Department of Electronics, School of Physical Sciences
Author for correspondence.
Email: agkhairnar@gmail.com
India, Jalgaon, Maharashtra, 425001
V. S. Patil
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
India, Jalgaon, Maharashtra, 425001
K. S. Agrawal
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
India, Jalgaon, Maharashtra, 425001
R. S. Salunke
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
India, Jalgaon, Maharashtra, 425001
A. M. Mahajan
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
India, Jalgaon, Maharashtra, 425001