PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
- 作者: Khairnar A.1, Patil V.1, Agrawal K.1, Salunke R.1, Mahajan A.1
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隶属关系:
- Department of Electronics, School of Physical Sciences
- 期: 卷 51, 编号 1 (2017)
- 页面: 131-133
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/199380
- DOI: https://doi.org/10.1134/S1063782617010092
- ID: 199380
如何引用文章
详细
The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°С. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.
作者简介
A. Khairnar
Department of Electronics, School of Physical Sciences
编辑信件的主要联系方式.
Email: agkhairnar@gmail.com
印度, Jalgaon, Maharashtra, 425001
V. Patil
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
印度, Jalgaon, Maharashtra, 425001
K. Agrawal
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
印度, Jalgaon, Maharashtra, 425001
R. Salunke
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
印度, Jalgaon, Maharashtra, 425001
A. Mahajan
Department of Electronics, School of Physical Sciences
Email: agkhairnar@gmail.com
印度, Jalgaon, Maharashtra, 425001