Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
- Authors: Novikov A.V.1,2, Shaleev M.V.1, Yurasov D.V.1,2, Yunin P.A.1,2
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Issue: Vol 50, No 12 (2016)
- Pages: 1630-1634
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198913
- DOI: https://doi.org/10.1134/S1063782616120137
- ID: 198913
Cite item
Abstract
The influence of the surface microroughness on the critical thickness for the two-dimensional growth of strained SiGe structures on Si(001) and Ge(001) substrates is investigated. A decrease in the critical thickness for the two-dimensional growth of Ge films with increasing number of lattice periods or a decrease in the thickness of Si spacer layers is found for Ge/Si lattices grown on Si(001) substrates. This change is related to an increase in the surface roughness with the accumulation of elastic energy in compressed structures. A comparative study of the growth of SiGe structures on Si(001) and Ge(001) substrates shows that the critical thickness for the two-dimensional growth of tensile-strained layers is much larger than for compressed layers in a wide range of SiGe-layer compositions at an identical (in magnitude) lattice mismatch between the film and substrate.
About the authors
A. V. Novikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. V. Shaleev
Institute for Physics of Microstructures
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
D. V. Yurasov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: anov@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950