Email this article Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
- Authors: Shtrom I.V.1,2,3, Bouravleuv A.D.1,2,3, Samsonenko Y.B.2,3,4, Khrebtov A.I.2,4, Soshnikov I.P.1,2,3, Reznik R.R.2,4,5, Cirlin G.E.2,3,4, Dhaka V.6, Perros A.6, Lipsanen H.6
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Affiliations:
- Ioffe Physical–Technical Institute
- St. Petersburg National Research Academic University—Nanotechnology Research and Education Center
- Institute of Analytical Instrumentation
- St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
- St. Petersburg State Polytechnic University
- Aalto University
- Issue: Vol 50, No 12 (2016)
- Pages: 1619-1621
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198858
- DOI: https://doi.org/10.1134/S1063782616120186
- ID: 198858
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Abstract
It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
About the authors
I. V. Shtrom
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Author for correspondence.
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
A. D. Bouravleuv
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
Yu. B. Samsonenko
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
A. I. Khrebtov
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101
I. P. Soshnikov
Ioffe Physical–Technical Institute; St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103
R. R. Reznik
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics; St. Petersburg State Polytechnic University
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101; St. Petersburg, 195251
G. E. Cirlin
St. Petersburg National Research Academic University—Nanotechnology Research and Education Center; Institute of Analytical Instrumentation; St. Petersburg National Research University of Information Technologies, Mechanics, and Optics
Email: igorstrohm@mail.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
V. Dhaka
Aalto University
Email: igorstrohm@mail.ru
Finland, Espoo, FI-00076
A. Perros
Aalto University
Email: igorstrohm@mail.ru
Finland, Espoo, FI-00076
H. Lipsanen
Aalto University
Email: igorstrohm@mail.ru
Finland, Espoo, FI-00076
