Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs
- Authors: Ushanov V.I.1, Chaldyshev V.V.1, Preobrazhenskii V.V.2, Putyato M.A.2, Semyagin B.R.2
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Affiliations:
- Ioffe Physical–Technical Institute
- Institute of Semiconductor Physics
- Issue: Vol 50, No 12 (2016)
- Pages: 1595-1599
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198803
- DOI: https://doi.org/10.1134/S1063782616120253
- ID: 198803
Cite item
Abstract
The optical reflection from periodic structures based on a semiconductor AlGaAs matrix containing 2D arrays of plasmonic AsSb nanoinclusions is studied. The number of nanoinclusion layers is 12 or 24, and the nominal spatial periods are 100 or 110 nm, respectively. In the experimental spectra of the optical reflection coefficient at normal incidence, we observe resonant Bragg diffraction with the main peaks at wavelengths of 757 or 775 nm (1.64 or 1.60 eV), depending on the spatial period of the nanostructure. The magnitudes of the resonance peaks reach 22 and 31% for the systems of 12 and 24 AsSb–AlGaAs layers, while the volume fraction of the nanoinclusions is much less than 1%. In the case of light incident at inclined angles, the Bragg-diffraction pattern shifts according to Wulff–Bragg’s law. Numerical simulation of the optical reflection spectra is performed using the transfer-matrix method by taking into account the spatial geometry of the structures and the resonance characteristics of the plasmonic AsSb layers.
About the authors
V. I. Ushanov
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Decorus2009@mail.ru
Russian Federation, St. Petersburg, 194021
V. V. Chaldyshev
Ioffe Physical–Technical Institute
Email: Decorus2009@mail.ru
Russian Federation, St. Petersburg, 194021
V. V. Preobrazhenskii
Institute of Semiconductor Physics
Email: Decorus2009@mail.ru
Russian Federation, Novosibirsk, 630090
M. A. Putyato
Institute of Semiconductor Physics
Email: Decorus2009@mail.ru
Russian Federation, Novosibirsk, 630090
B. R. Semyagin
Institute of Semiconductor Physics
Email: Decorus2009@mail.ru
Russian Federation, Novosibirsk, 630090