Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer
- Authors: Tikhov S.V.1, Gorshkov O.N.1, Koryazhkina M.N.1, Kasatkin A.P.1, Antonov I.N.1, Vihrova O.V.1, Morozov A.I.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- Issue: Vol 50, No 12 (2016)
- Pages: 1589-1594
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198797
- DOI: https://doi.org/10.1134/S1063782616120228
- ID: 198797
Cite item
Abstract
The properties of metal–insulator–semiconductor (MIS) structures based on n-GaAs in which silicon oxide and yttria-stabilized zirconia and hafnia are used as the insulator containing InAs quantum dots, which are embedded at the insulator/n-GaAs interface, are investigated. The structures manifest the resistive switching and synaptic behavior.
About the authors
S. V. Tikhov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
O. N. Gorshkov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
M. N. Koryazhkina
Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. P. Kasatkin
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
I. N. Antonov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
O. V. Vihrova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
A. I. Morozov
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950