Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
- Authors: Tarasova E.A.1, Obolenskaya E.S.1, Hananova A.V.1, Obolensky S.V.1, Zemliakov V.E.2, Egorkin V.I.2, Nezhenzev A.V.1, Saharov A.V.3, Zazul’nokov A.F.3, Lundin V.V.3, Zavarin E.E.3, Medvedev G.V.4
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod (NNSU)
- National Research University of Electronic Technology (MIET)
- Ioffe Physical–Technical Institute
- JSC RPE Salut
- Issue: Vol 50, No 12 (2016)
- Pages: 1574-1578
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198775
- DOI: https://doi.org/10.1134/S1063782616120216
- ID: 198775
Cite item
Abstract
The sensitivity of classical n+/n– GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current–voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.
About the authors
E. A. Tarasova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
E. S. Obolenskaya
Lobachevsky State University of Nizhny Novgorod (NNSU)
Author for correspondence.
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Hananova
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
S. V. Obolensky
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
V. E. Zemliakov
National Research University of Electronic Technology (MIET)
Email: obolensk@rf.unn.ru
Russian Federation, Moscow, Zelenograd, 124498
V. I. Egorkin
National Research University of Electronic Technology (MIET)
Email: obolensk@rf.unn.ru
Russian Federation, Moscow, Zelenograd, 124498
A. V. Nezhenzev
Lobachevsky State University of Nizhny Novgorod (NNSU)
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Saharov
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Russian Federation, St. Petersburg, 194021
A. F. Zazul’nokov
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Russian Federation, St. Petersburg, 194021
V. V. Lundin
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Russian Federation, St. Petersburg, 194021
E. E. Zavarin
Ioffe Physical–Technical Institute
Email: obolensk@rf.unn.ru
Russian Federation, St. Petersburg, 194021
G. V. Medvedev
JSC RPE Salut
Email: obolensk@rf.unn.ru
Russian Federation, Nizhny Novgorod, 603950